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Effects of phosphorous and antimony doping on thin Ge layers grown on Si.
Yu X, Jia H, Yang J, Masteghin MG, Beere H, Mtunzi M, Deng H, Huo S, Chen C, Chen S, Tang M, Sweeney SJ, Ritchie D, Seeds A, Liu H. Yu X, et al. Among authors: chen c, chen s. Sci Rep. 2024 Apr 4;14(1):7969. doi: 10.1038/s41598-024-57937-8. Sci Rep. 2024. PMID: 38575676 Free PMC article.
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