Kong J - Search Results

1

Boosting Monolayer Transition Metal Dichalcogenides Growth by Hydrogen-Free Ramping during Chemical Vapor Deposition.

Liu H, Zhang T, Wu P, Lee HW, Liu Z, Tang TW, Tang SY, Kang T, Park JH, Wang J, Zhang K, Zheng X, Peng YR, Chueh YL, Liu Y, Palacios T, Kong J, Luo Z. Liu H, et al. Among authors: kong j. Nano Lett. 2024 Jul 10;24(27):8277-8286. doi: 10.1021/acs.nanolett.4c01314. Epub 2024 Jul 1. Nano Lett. 2024. PMID: 38949123

2

Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition.

Reina A, Jia X, Ho J, Nezich D, Son H, Bulovic V, Dresselhaus MS, Kong J. Reina A, et al. Among authors: kong j. Nano Lett. 2009 Jan;9(1):30-5. doi: 10.1021/nl801827v. Nano Lett. 2009. PMID: 19046078

3

In-situ sample rotation as a tool to understand chemical vapor deposition growth of long aligned carbon nanotubes.

Hofmann M, Nezich D, Reina A, Kong J. Hofmann M, et al. Among authors: kong j. Nano Lett. 2008 Dec;8(12):4122-7. doi: 10.1021/nl801461f. Nano Lett. 2008. PMID: 19367958

4

Role of kinetic factors in chemical vapor deposition synthesis of uniform large area graphene using copper catalyst.

Bhaviripudi S, Jia X, Dresselhaus MS, Kong J. Bhaviripudi S, et al. Among authors: kong j. Nano Lett. 2010 Oct 13;10(10):4128-33. doi: 10.1021/nl102355e. Nano Lett. 2010. PMID: 20812667

5

Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition.

Shi Y, Hamsen C, Jia X, Kim KK, Reina A, Hofmann M, Hsu AL, Zhang K, Li H, Juang ZY, Dresselhaus MS, Li LJ, Kong J. Shi Y, et al. Among authors: kong j. Nano Lett. 2010 Oct 13;10(10):4134-9. doi: 10.1021/nl1023707. Nano Lett. 2010. PMID: 20812716

6

Graphene as transparent conducting electrodes in organic photovoltaics: studies in graphene morphology, hole transporting layers, and counter electrodes.

Park H, Brown PR, Bulović V, Kong J. Park H, et al. Among authors: kong j. Nano Lett. 2012 Jan 11;12(1):133-40. doi: 10.1021/nl2029859. Epub 2011 Dec 1. Nano Lett. 2012. PMID: 22107487

7

Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.

Kim KK, Hsu A, Jia X, Kim SM, Shi Y, Hofmann M, Nezich D, Rodriguez-Nieva JF, Dresselhaus M, Palacios T, Kong J. Kim KK, et al. Among authors: kong j. Nano Lett. 2012 Jan 11;12(1):161-6. doi: 10.1021/nl203249a. Epub 2011 Dec 6. Nano Lett. 2012. PMID: 22111957

8

van der Waals epitaxy of MoS₂ layers using graphene as growth templates.

Shi Y, Zhou W, Lu AY, Fang W, Lee YH, Hsu AL, Kim SM, Kim KK, Yang HY, Li LJ, Idrobo JC, Kong J. Shi Y, et al. Among authors: kong j. Nano Lett. 2012 Jun 13;12(6):2784-91. doi: 10.1021/nl204562j. Epub 2012 Jun 1. Nano Lett. 2012. PMID: 22642717

9

Integrated circuits based on bilayer MoS₂ transistors.

Wang H, Yu L, Lee YH, Shi Y, Hsu A, Chin ML, Li LJ, Dubey M, Kong J, Palacios T. Wang H, et al. Among authors: kong j. Nano Lett. 2012 Sep 12;12(9):4674-80. doi: 10.1021/nl302015v. Epub 2012 Aug 10. Nano Lett. 2012. PMID: 22862813

10

Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices.

Kim KK, Hsu A, Jia X, Kim SM, Shi Y, Dresselhaus M, Palacios T, Kong J. Kim KK, et al. Among authors: kong j. ACS Nano. 2012 Oct 23;6(10):8583-90. doi: 10.1021/nn301675f. Epub 2012 Sep 20. ACS Nano. 2012. PMID: 22970651

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