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Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors.
Si M, Hu Y, Lin Z, Sun X, Charnas A, Zheng D, Lyu X, Wang H, Cho K, Ye PD. Si M, et al. Among authors: zheng d. Nano Lett. 2021 Jan 13;21(1):500-506. doi: 10.1021/acs.nanolett.0c03967. Epub 2020 Dec 29. Nano Lett. 2021. PMID: 33372788
Review-Extremely Thin Amorphous Indium Oxide Transistors.
Charnas A, Zhang Z, Lin Z, Zheng D, Zhang J, Si M, Ye PD. Charnas A, et al. Among authors: zheng d. Adv Mater. 2024 Mar;36(9):e2304044. doi: 10.1002/adma.202304044. Epub 2023 Dec 8. Adv Mater. 2024. PMID: 37957006 Review.
5,929 results