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Intrinsic ferroelectricity in Y-doped HfO2 thin films.
Yun Y, Buragohain P, Li M, Ahmadi Z, Zhang Y, Li X, Wang H, Li J, Lu P, Tao L, Wang H, Shield JE, Tsymbal EY, Gruverman A, Xu X. Yun Y, et al. Among authors: zhang y. Nat Mater. 2022 Aug;21(8):903-909. doi: 10.1038/s41563-022-01282-6. Epub 2022 Jun 27. Nat Mater. 2022. PMID: 35761058
Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current.
Lin Z, Si M, Askarpour V, Niu C, Charnas A, Shang Z, Zhang Y, Hu Y, Zhang Z, Liao PY, Cho K, Wang H, Lundstrom M, Maassen J, Ye PD. Lin Z, et al. Among authors: zhang z, zhang y. ACS Nano. 2022 Dec 27;16(12):21536-21545. doi: 10.1021/acsnano.2c10383. Epub 2022 Nov 29. ACS Nano. 2022. PMID: 36446079
Sustainable Enhanced Sodium-Ion Storage at Subzero Temperature with LiF Integration.
Koppisetti HVSRM, Rao H, Ramasamy HV, Inta HR, Das S, Kim S, Zhang Y, Wang H, Mahalingam V, Pol VG. Koppisetti HVSRM, et al. Among authors: zhang y. ACS Appl Mater Interfaces. 2023 Jul 12;15(27):32291-32300. doi: 10.1021/acsami.3c03386. Epub 2023 Jun 28. ACS Appl Mater Interfaces. 2023. PMID: 37379525
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