Sigg H - Search Results

1

Silicon carbide X-ray beam position monitors for synchrotron applications.

Nida S, Tsibizov A, Ziemann T, Woerle J, Moesch A, Schulze-Briese C, Pradervand C, Tudisco S, Sigg H, Bunk O, Grossner U, Camarda M. Nida S, et al. Among authors: sigg h. J Synchrotron Radiat. 2019 Jan 1;26(Pt 1):28-35. doi: 10.1107/S1600577518014248. Epub 2019 Jan 1. J Synchrotron Radiat. 2019. PMID: 30655465 Free PMC article.

2

Scanning X-ray strain microscopy of inhomogeneously strained Ge micro-bridges.

Etzelstorfer T, Süess MJ, Schiefler GL, Jacques VL, Carbone D, Chrastina D, Isella G, Spolenak R, Stangl J, Sigg H, Diaz A. Etzelstorfer T, et al. Among authors: sigg h. J Synchrotron Radiat. 2014 Jan;21(Pt 1):111-8. doi: 10.1107/S1600577513025459. Epub 2013 Nov 2. J Synchrotron Radiat. 2014. PMID: 24365924 Free PMC article.

3

Ultra-broadband infrared pump-probe spectroscopy using synchrotron radiation and a tuneable pump.

Carroll L, Friedli P, Lerch P, Schneider J, Treyer D, Hunziker S, Stutz S, Sigg H. Carroll L, et al. Among authors: sigg h. Rev Sci Instrum. 2011 Jun;82(6):063101. doi: 10.1063/1.3592332. Rev Sci Instrum. 2011. PMID: 21721668

4

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%.

Minamisawa RA, Süess MJ, Spolenak R, Faist J, David C, Gobrecht J, Bourdelle KK, Sigg H. Minamisawa RA, et al. Among authors: sigg h. Nat Commun. 2012;3:1096. doi: 10.1038/ncomms2102. Nat Commun. 2012. PMID: 23033072 Free article.

5

Power-dependent Raman analysis of highly strained Si nanobridges.

Süess MJ, Minamisawa RA, Geiger R, Bourdelle KK, Sigg H, Spolenak R. Süess MJ, et al. Among authors: sigg h. Nano Lett. 2014 Mar 12;14(3):1249-54. doi: 10.1021/nl404152r. Epub 2014 Feb 28. Nano Lett. 2014. PMID: 24564181

6

Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain.

Carroll L, Friedli P, Neuenschwander S, Sigg H, Cecchi S, Isa F, Chrastina D, Isella G, Fedoryshyn Y, Faist J. Carroll L, et al. Among authors: sigg h. Phys Rev Lett. 2012 Aug 3;109(5):057402. doi: 10.1103/PhysRevLett.109.057402. Epub 2012 Aug 1. Phys Rev Lett. 2012. PMID: 23006206

7

Three-dimensional Si/Ge quantum dot crystals.

Grützmacher D, Fromherz T, Dais C, Stangl J, Müller E, Ekinci Y, Solak HH, Sigg H, Lechner RT, Wintersberger E, Birner S, Holý V, Bauer G. Grützmacher D, et al. Among authors: sigg h. Nano Lett. 2007 Oct;7(10):3150-6. doi: 10.1021/nl0717199. Epub 2007 Sep 25. Nano Lett. 2007. PMID: 17892317

8

Dye-injected electron trapping in TiO2 determined by broadband transient infrared spectroscopy.

Friedli P, Sigg H, Sá J. Friedli P, et al. Among authors: sigg h. Photochem Photobiol Sci. 2014 Oct;13(10):1393-6. doi: 10.1039/c4pp00152d. Photochem Photobiol Sci. 2014. PMID: 25179668

9

Transient mid-IR study of electron dynamics in TiO2 conduction band.

Sá J, Friedli P, Geiger R, Lerch P, Rittmann-Frank MH, Milne CJ, Szlachetko J, Santomauro FG, van Bokhoven JA, Chergui M, Rossi MJ, Sigg H. Sá J, et al. Among authors: sigg h. Analyst. 2013 Apr 7;138(7):1966-70. doi: 10.1039/c3an36595f. Epub 2013 Feb 22. Analyst. 2013. PMID: 23431560

10

Single-shot electron bunch length measurements using a spatial electro-optical autocorrelation interferometer.

Sütterlin D, Erni D, Schlott V, Sigg H, Jäckel H, Murk A. Sütterlin D, et al. Among authors: sigg h. Rev Sci Instrum. 2010 Oct;81(10):104702. doi: 10.1063/1.3480997. Rev Sci Instrum. 2010. PMID: 21034105

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