Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance.
Peverini F, Aziz S, Bashiri A, Bizzarri M, Boscardin M, Calcagnile L, Calcatelli C, Calvo D, Caponi S, Caprai M, Caputo D, Caricato AP, Catalano R, Cirro R, Cirrone GAP, Crivellari M, Croci T, Cuttone G, de Cesare G, De Remigis P, Dunand S, Fabi M, Frontini L, Fanò L, Gianfelici B, Grimani C, Hammad O, Ionica M, Kanxheri K, Large M, Lenta F, Liberali V, Lovecchio N, Martino M, Maruccio G, Mazza G, Menichelli M, Monteduro AG, Moscatelli F, Morozzi A, Nascetti A, Pallotta S, Papi A, Passeri D, Petasecca M, Petringa G, Pis I, Placidi P, Quarta G, Rizzato S, Rossi A, Rossi G, Sabbatini F, Scorzoni A, Servoli L, Stabile A, Tacchi S, Talamonti C, Thomet J, Tosti L, Verzellesi G, Villani M, Wheadon RJ, Wyrsch N, Zema N, Pedio M.
Peverini F, et al. Among authors: tosti l.
Nanomaterials (Basel). 2024 Sep 25;14(19):1551. doi: 10.3390/nano14191551.
Nanomaterials (Basel). 2024.
PMID: 39404277
Free PMC article.