Taniguchi T - Search Results

1

Emergence of Tertiary Dirac Points in Graphene Moiré Superlattices.

Chen G, Sui M, Wang D, Wang S, Jung J, Moon P, Adam S, Watanabe K, Taniguchi T, Zhou S, Koshino M, Zhang G, Zhang Y. Chen G, et al. Among authors: taniguchi t. Nano Lett. 2017 Jun 14;17(6):3576-3581. doi: 10.1021/acs.nanolett.7b00735. Epub 2017 May 18. Nano Lett. 2017. PMID: 28475836

2

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.

Watanabe K, Taniguchi T, Kanda H. Watanabe K, et al. Among authors: taniguchi t. Nat Mater. 2004 Jun;3(6):404-9. doi: 10.1038/nmat1134. Epub 2004 May 23. Nat Mater. 2004. PMID: 15156198

3

Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure.

Kubota Y, Watanabe K, Tsuda O, Taniguchi T. Kubota Y, et al. Among authors: taniguchi t. Science. 2007 Aug 17;317(5840):932-4. doi: 10.1126/science.1144216. Science. 2007. PMID: 17702939

4

Micrometer-scale ballistic transport in encapsulated graphene at room temperature.

Mayorov AS, Gorbachev RV, Morozov SV, Britnell L, Jalil R, Ponomarenko LA, Blake P, Novoselov KS, Watanabe K, Taniguchi T, Geim AK. Mayorov AS, et al. Among authors: taniguchi t. Nano Lett. 2011 Jun 8;11(6):2396-9. doi: 10.1021/nl200758b. Epub 2011 May 16. Nano Lett. 2011. PMID: 21574627

5

Quantum Hall effect, screening, and layer-polarized insulating states in twisted bilayer graphene.

Sanchez-Yamagishi JD, Taychatanapat T, Watanabe K, Taniguchi T, Yacoby A, Jarillo-Herrero P. Sanchez-Yamagishi JD, et al. Among authors: taniguchi t. Phys Rev Lett. 2012 Feb 17;108(7):076601. doi: 10.1103/PhysRevLett.108.076601. Epub 2012 Feb 13. Phys Rev Lett. 2012. PMID: 22401231

6

Boundary scattering in ballistic graphene.

Masubuchi S, Iguchi K, Yamaguchi T, Onuki M, Arai M, Watanabe K, Taniguchi T, Machida T. Masubuchi S, et al. Among authors: taniguchi t. Phys Rev Lett. 2012 Jul 20;109(3):036601. doi: 10.1103/PhysRevLett.109.036601. Epub 2012 Jul 18. Phys Rev Lett. 2012. PMID: 22861881

7

Effective cleaning of hexagonal boron nitride for graphene devices.

Garcia AG, Neumann M, Amet F, Williams JR, Watanabe K, Taniguchi T, Goldhaber-Gordon D. Garcia AG, et al. Among authors: taniguchi t. Nano Lett. 2012 Sep 12;12(9):4449-54. doi: 10.1021/nl3011726. Epub 2012 Aug 20. Nano Lett. 2012. PMID: 22866696

8

Gate-defined confinement in bilayer graphene-hexagonal boron nitride hybrid devices.

Goossens AS, Driessen SC, Baart TA, Watanabe K, Taniguchi T, Vandersypen LM. Goossens AS, et al. Among authors: taniguchi t. Nano Lett. 2012 Sep 12;12(9):4656-60. doi: 10.1021/nl301986q. Epub 2012 Aug 30. Nano Lett. 2012. PMID: 22906072

9

Negligible environmental sensitivity of graphene in a hexagonal boron nitride/graphene/h-BN sandwich structure.

Wang L, Chen Z, Dean CR, Taniguchi T, Watanabe K, Brus LE, Hone J. Wang L, et al. Among authors: taniguchi t. ACS Nano. 2012 Oct 23;6(10):9314-9. doi: 10.1021/nn304004s. Epub 2012 Oct 1. ACS Nano. 2012. PMID: 23009029

10

Slow gold adatom diffusion on graphene: effect of silicon dioxide and hexagonal boron nitride substrates.

Liu L, Chen Z, Wang L, Polyakova Stolyarova E, Taniguchi T, Watanabe K, Hone J, Flynn GW, Brus LE. Liu L, et al. Among authors: taniguchi t. J Phys Chem B. 2013 Apr 25;117(16):4305-12. doi: 10.1021/jp305521g. Epub 2012 Nov 19. J Phys Chem B. 2013. PMID: 23121443

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