Liu Q - Search Results

1

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Huang F, Chen X, Liang X, Qin J, Zhang Y, Huang T, Wang Z, Peng B, Zhou P, Lu H, Zhang L, Deng L, Liu M, Liu Q, Tian H, Bi L. Huang F, et al. Among authors: liu m, liu q. Phys Chem Chem Phys. 2017 Feb 1;19(5):3486-3497. doi: 10.1039/c6cp07501k. Phys Chem Chem Phys. 2017. PMID: 27924320

2

Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

Yang YC, Pan F, Liu Q, Liu M, Zeng F. Yang YC, et al. Among authors: liu m, liu q. Nano Lett. 2009 Apr;9(4):1636-43. doi: 10.1021/nl900006g. Nano Lett. 2009. PMID: 19271714

3

Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applications.

Guan W, Long S, Hu Y, Liu Q, Wang Q, Liu M. Guan W, et al. Among authors: liu m, liu q. J Nanosci Nanotechnol. 2009 Feb;9(2):723-6. doi: 10.1166/jnn.2009.c011. J Nanosci Nanotechnol. 2009. PMID: 19441379

4

Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications.

Wang Y, Liu Q, Long S, Wang W, Wang Q, Zhang M, Zhang S, Li Y, Zuo Q, Yang J, Liu M. Wang Y, et al. Among authors: liu m, liu q. Nanotechnology. 2010 Jan 29;21(4):045202. doi: 10.1088/0957-4484/21/4/045202. Epub 2009 Dec 10. Nanotechnology. 2010. PMID: 20009169

5

Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode.

Liu Q, Long S, Lv H, Wang W, Niu J, Huo Z, Chen J, Liu M. Liu Q, et al. Among authors: liu m. ACS Nano. 2010 Oct 26;4(10):6162-8. doi: 10.1021/nn1017582. ACS Nano. 2010. PMID: 20853865

6

Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices.

Butcher B, He X, Huang M, Wang Y, Liu Q, Lv H, Liu M, Wang W. Butcher B, et al. Among authors: liu m, liu q. Nanotechnology. 2010 Nov 26;21(47):475206. doi: 10.1088/0957-4484/21/47/475206. Epub 2010 Oct 29. Nanotechnology. 2010. PMID: 21030760

7

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Li Y, Long S, Lv H, Liu Q, Wang Y, Zhang S, Lian W, Wang M, Zhang K, Xie H, Liu S, Liu M. Li Y, et al. Among authors: liu m, liu s, liu q. Nanotechnology. 2011 Jun 24;22(25):254028. doi: 10.1088/0957-4484/22/25/254028. Epub 2011 May 16. Nanotechnology. 2011. PMID: 21572216

8

[The preparation, characterization and ultraviolet photodegradation of LNG-HP-beta-CD].

Wang DW, Liu Q, Liu M, Liu XH. Wang DW, et al. Among authors: liu xh, liu m, liu q. Guang Pu Xue Yu Guang Pu Fen Xi. 2011 Mar;31(3):808-11. Guang Pu Xue Yu Guang Pu Fen Xi. 2011. PMID: 21595245 Chinese.

9

Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

Liu Q, Sun J, Lv H, Long S, Yin K, Wan N, Li Y, Sun L, Liu M. Liu Q, et al. Among authors: liu m. Adv Mater. 2012 Apr 10;24(14):1844-9. doi: 10.1002/adma.201104104. Epub 2012 Mar 7. Adv Mater. 2012. PMID: 22407902

10

Bipolar one diode-one resistor integration for high-density resistive memory applications.

Li Y, Lv H, Liu Q, Long S, Wang M, Xie H, Zhang K, Huo Z, Liu M. Li Y, et al. Among authors: liu m, liu q. Nanoscale. 2013 Jun 7;5(11):4785-9. doi: 10.1039/c3nr33370a. Epub 2013 Apr 23. Nanoscale. 2013. PMID: 23612603

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