Wang S - Search Results

1

High Conversion Efficiency Carbon Nanotube-Based Barrier-Free Bipolar-Diode Photodetector.

Wang F, Wang S, Yao F, Xu H, Wei N, Liu K, Peng LM. Wang F, et al. Among authors: wang s. ACS Nano. 2016 Oct 25;10(10):9595-9601. doi: 10.1021/acsnano.6b05047. Epub 2016 Sep 20. ACS Nano. 2016. PMID: 27632420

2

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Zhang Z, Wang S, Ding L, Liang X, Pei T, Shen J, Xu H, Chen Q, Cui R, Li Y, Peng LM. Zhang Z, et al. Among authors: wang s. Nano Lett. 2008 Nov;8(11):3696-701. doi: 10.1021/nl8018802. Epub 2008 Oct 24. Nano Lett. 2008. PMID: 18947214

3

Almost perfectly symmetric SWCNT-based CMOS devices and scaling.

Zhang Z, Wang S, Wang Z, Ding L, Pei T, Hu Z, Liang X, Chen Q, Li Y, Peng LM. Zhang Z, et al. Among authors: wang z, wang s. ACS Nano. 2009 Nov 24;3(11):3781-7. doi: 10.1021/nn901079p. ACS Nano. 2009. PMID: 19845337

4

Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices.

Ding L, Wang S, Zhang Z, Zeng Q, Wang Z, Pei T, Yang L, Liang X, Shen J, Chen Q, Cui R, Li Y, Peng LM. Ding L, et al. Among authors: wang z, wang s. Nano Lett. 2009 Dec;9(12):4209-14. doi: 10.1021/nl9024243. Nano Lett. 2009. PMID: 19995085

5

Growth and performance of yttrium oxide as an ideal high-kappa gate dielectric for carbon-based electronics.

Wang Z, Xu H, Zhang Z, Wang S, Ding L, Zeng Q, Yang L, Pei T, Liang X, Gao M, Peng LM. Wang Z, et al. Among authors: wang s. Nano Lett. 2010 Jun 9;10(6):2024-30. doi: 10.1021/nl100022u. Nano Lett. 2010. PMID: 20455575

6

Large signal operation of small band-gap carbon nanotube-based ambipolar transistor: a high-performance frequency doubler.

Wang Z, Ding L, Pei T, Zhang Z, Wang S, Yu T, Ye X, Peng F, Li Y, Peng LM. Wang Z, et al. Among authors: wang s. Nano Lett. 2010 Sep 8;10(9):3648-55. doi: 10.1021/nl102111j. Nano Lett. 2010. PMID: 20677775

7

High-performance carbon nanotube light-emitting diodes with asymmetric contacts.

Wang S, Zeng Q, Yang L, Zhang Z, Wang Z, Pei T, Ding L, Liang X, Gao M, Li Y, Peng LM. Wang S, et al. Among authors: wang z. Nano Lett. 2011 Jan 12;11(1):23-9. doi: 10.1021/nl101513z. Epub 2010 Nov 30. Nano Lett. 2011. PMID: 21117697

8

Quantum capacitance limited vertical scaling of graphene field-effect transistor.

Xu H, Zhang Z, Wang Z, Wang S, Liang X, Peng LM. Xu H, et al. Among authors: wang z, wang s. ACS Nano. 2011 Mar 22;5(3):2340-7. doi: 10.1021/nn200026e. Epub 2011 Feb 16. ACS Nano. 2011. PMID: 21323320

9

Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering.

Ding L, Wang Z, Pei T, Zhang Z, Wang S, Xu H, Peng F, Li Y, Peng LM. Ding L, et al. Among authors: wang z, wang s. ACS Nano. 2011 Apr 26;5(4):2512-9. doi: 10.1021/nn102091h. Epub 2011 Mar 11. ACS Nano. 2011. PMID: 21370813

10

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Xu H, Zhang Z, Xu H, Wang Z, Wang S, Peng LM. Xu H, et al. Among authors: wang z, wang s. ACS Nano. 2011 Jun 28;5(6):5031-7. doi: 10.1021/nn201115p. Epub 2011 May 6. ACS Nano. 2011. PMID: 21528892

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