Mi Z - Search Results

1

Three-Dimensional Quantum Confinement of Charge Carriers in Self-Organized AlGaN Nanowires: A Viable Route to Electrically Injected Deep Ultraviolet Lasers.

Zhao S, Woo SY, Bugnet M, Liu X, Kang J, Botton GA, Mi Z. Zhao S, et al. Among authors: mi z. Nano Lett. 2015 Dec 9;15(12):7801-7. doi: 10.1021/acs.nanolett.5b02133. Epub 2015 Nov 16. Nano Lett. 2015. PMID: 26539880

2

p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).

Nguyen HP, Zhang S, Cui K, Han X, Fathololoumi S, Couillard M, Botton GA, Mi Z. Nguyen HP, et al. Among authors: mi z. Nano Lett. 2011 May 11;11(5):1919-24. doi: 10.1021/nl104536x. Epub 2011 Apr 25. Nano Lett. 2011. PMID: 21517080

3

Wafer-level photocatalytic water splitting on GaN nanowire arrays grown by molecular beam epitaxy.

Wang D, Pierre A, Kibria MG, Cui K, Han X, Bevan KH, Guo H, Paradis S, Hakima AR, Mi Z. Wang D, et al. Among authors: mi z. Nano Lett. 2011 Jun 8;11(6):2353-7. doi: 10.1021/nl2006802. Epub 2011 May 13. Nano Lett. 2011. PMID: 21568321

4

Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement.

Chen Z, Li Y, Cao C, Zhao S, Fathololoumi S, Mi Z, Xu X. Chen Z, et al. Among authors: mi z. J Am Chem Soc. 2012 Jan 18;134(2):780-3. doi: 10.1021/ja209072v. Epub 2012 Jan 6. J Am Chem Soc. 2012. PMID: 22224725

5

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

Nguyen HP, Cui K, Zhang S, Djavid M, Korinek A, Botton GA, Mi Z. Nguyen HP, et al. Among authors: mi z. Nano Lett. 2012 Mar 14;12(3):1317-23. doi: 10.1021/nl203860b. Epub 2012 Feb 2. Nano Lett. 2012. PMID: 22283508

6

Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates.

Cui K, Fathololoumi S, Golam Kibria M, Botton GA, Mi Z. Cui K, et al. Among authors: mi z. Nanotechnology. 2012 Mar 2;23(8):085205. doi: 10.1088/0957-4484/23/8/085205. Epub 2012 Feb 1. Nanotechnology. 2012. PMID: 22293649

7

Tuning the surface charge properties of epitaxial InN nanowires.

Zhao S, Fathololoumi S, Bevan KH, Liu DP, Kibria MG, Li Q, Wang GT, Guo H, Mi Z. Zhao S, et al. Among authors: mi z. Nano Lett. 2012 Jun 13;12(6):2877-82. doi: 10.1021/nl300476d. Epub 2012 May 14. Nano Lett. 2012. PMID: 22545811

8

Observation of phonon sideband emission in intrinsic InN nanowires: a photoluminescence and micro-Raman scattering study.

Zhao S, Wang Q, Mi Z, Fathololoumi S, Gonzalez T, Andrews MP. Zhao S, et al. Among authors: mi z. Nanotechnology. 2012 Oct 19;23(41):415706. doi: 10.1088/0957-4484/23/41/415706. Epub 2012 Sep 27. Nanotechnology. 2012. PMID: 23018196

9

High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode.

AlOtaibi B, Harati M, Fan S, Zhao S, Nguyen HP, Kibria MG, Mi Z. AlOtaibi B, et al. Among authors: mi z. Nanotechnology. 2013 May 3;24(17):175401. doi: 10.1088/0957-4484/24/17/175401. Epub 2013 Apr 3. Nanotechnology. 2013. PMID: 23548782

10

Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy.

Zhao S, Kibria MG, Wang Q, Nguyen HP, Mi Z. Zhao S, et al. Among authors: mi z. Nanoscale. 2013 Jun 21;5(12):5283-7. doi: 10.1039/c3nr00387f. Nanoscale. 2013. PMID: 23661186

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