Feng X - Search Results

1

Band structure engineering in (Bi(1-x)Sb(x))(2)Te(3) ternary topological insulators.

Zhang J, Chang CZ, Zhang Z, Wen J, Feng X, Li K, Liu M, He K, Wang L, Chen X, Xue QK, Ma X, Wang Y. Zhang J, et al. Among authors: feng x. Nat Commun. 2011 Dec 6;2:574. doi: 10.1038/ncomms1588. Nat Commun. 2011. PMID: 22146393 Free article.

2

Modulating resonance modes and Q value of a CdS nanowire cavity by single Ag nanoparticles.

Zhang Q, Shan XY, Feng X, Wang CX, Wang QQ, Jia JF, Xue QK. Zhang Q, et al. Among authors: feng x. Nano Lett. 2011 Oct 12;11(10):4270-4. doi: 10.1021/nl2022674. Epub 2011 Sep 12. Nano Lett. 2011. PMID: 21894936

3

Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator.

Liu M, Zhang J, Chang CZ, Zhang Z, Feng X, Li K, He K, Wang LL, Chen X, Dai X, Fang Z, Xue QK, Ma X, Wang Y. Liu M, et al. Among authors: feng x. Phys Rev Lett. 2012 Jan 20;108(3):036805. doi: 10.1103/PhysRevLett.108.036805. Epub 2012 Jan 19. Phys Rev Lett. 2012. PMID: 22400773

4

Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order.

Chang CZ, Zhang J, Liu M, Zhang Z, Feng X, Li K, Wang LL, Chen X, Dai X, Fang Z, Qi XL, Zhang SC, Wang Y, He K, Ma XC, Xue QK. Chang CZ, et al. Among authors: feng x. Adv Mater. 2013 Feb 20;25(7):1065-70. doi: 10.1002/adma.201203493. Epub 2013 Jan 18. Adv Mater. 2013. PMID: 23334936

5

Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator.

Chang CZ, Zhang J, Feng X, Shen J, Zhang Z, Guo M, Li K, Ou Y, Wei P, Wang LL, Ji ZQ, Feng Y, Ji S, Chen X, Jia J, Dai X, Fang Z, Zhang SC, He K, Wang Y, Lu L, Ma XC, Xue QK. Chang CZ, et al. Among authors: feng y, feng x. Science. 2013 Apr 12;340(6129):167-70. doi: 10.1126/science.1234414. Epub 2013 Mar 14. Science. 2013. PMID: 23493424

6

Topology-driven magnetic quantum phase transition in topological insulators.

Zhang J, Chang CZ, Tang P, Zhang Z, Feng X, Li K, Wang LL, Chen X, Liu C, Duan W, He K, Xue QK, Ma X, Wang Y. Zhang J, et al. Among authors: feng x. Science. 2013 Mar 29;339(6127):1582-6. doi: 10.1126/science.1230905. Science. 2013. PMID: 23539598

7

Chemical-potential-dependent gap opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms.

Chang CZ, Tang P, Wang YL, Feng X, Li K, Zhang Z, Wang Y, Wang LL, Chen X, Liu C, Duan W, He K, Ma XC, Xue QK. Chang CZ, et al. Among authors: feng x. Phys Rev Lett. 2014 Feb 7;112(5):056801. doi: 10.1103/PhysRevLett.112.056801. Epub 2014 Feb 6. Phys Rev Lett. 2014. PMID: 24580619

8

Electrically tuned magnetic order and magnetoresistance in a topological insulator.

Zhang Z, Feng X, Guo M, Li K, Zhang J, Ou Y, Feng Y, Wang L, Chen X, He K, Ma X, Xue Q, Wang Y. Zhang Z, et al. Among authors: feng y, feng x. Nat Commun. 2014 Sep 15;5:4915. doi: 10.1038/ncomms5915. Nat Commun. 2014. PMID: 25222696 Free article.

9

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators.

Chang CZ, Zhang Z, Li K, Feng X, Zhang J, Guo M, Feng Y, Wang J, Wang LL, Ma XC, Chen X, Wang Y, He K, Xue QK. Chang CZ, et al. Among authors: feng y, feng x. Nano Lett. 2015 Feb 11;15(2):1090-4. doi: 10.1021/nl504047c. Epub 2015 Jan 22. Nano Lett. 2015. PMID: 25594485

10

Observation of Anderson localization in ultrathin films of three-dimensional topological insulators.

Liao J, Ou Y, Feng X, Yang S, Lin C, Yang W, Wu K, He K, Ma X, Xue QK, Li Y. Liao J, et al. Among authors: feng x. Phys Rev Lett. 2015 May 29;114(21):216601. doi: 10.1103/PhysRevLett.114.216601. Epub 2015 May 28. Phys Rev Lett. 2015. PMID: 26066450

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