Peng LM - Search Results

1

Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering.

Ding L, Wang Z, Pei T, Zhang Z, Wang S, Xu H, Peng F, Li Y, Peng LM. Ding L, et al. Among authors: peng lm, peng f. ACS Nano. 2011 Apr 26;5(4):2512-9. doi: 10.1021/nn102091h. Epub 2011 Mar 11. ACS Nano. 2011. PMID: 21370813

2

Stability of carbon nanotubes: how small can they be?

Peng LM, Zhang ZL, Xue ZQ, Wu QD, Gu ZN, Pettifor DG. Peng LM, et al. Phys Rev Lett. 2000 Oct 9;85(15):3249-52. doi: 10.1103/PhysRevLett.85.3249. Phys Rev Lett. 2000. PMID: 11019313

3

Growth of compound single- and multi-walled carbon nanotubes.

Peng LM, Shi ZJ, Zhang ZL, Ouyang L, Gu ZN, Xue ZQ, Wu QD. Peng LM, et al. Ultramicroscopy. 2004 Jan;98(2-4):195-200. doi: 10.1016/j.ultramic.2003.08.012. Ultramicroscopy. 2004. PMID: 15046799

4

Tip cooling effect and failure mechanism of field-emitting carbon nanotubes.

Wei W, Liu Y, Wei Y, Jiang K, Peng LM, Fan S. Wei W, et al. Among authors: peng lm. Nano Lett. 2007 Jan;7(1):64-8. doi: 10.1021/nl061982u. Nano Lett. 2007. PMID: 17212441

5

A comparative study on SWCNT and DWCNT field-effect transistors.

Liang XL, Wang S, Duan XJ, Zhang ZY, Chen Q, Zhang J, Peng LM. Liang XL, et al. Among authors: peng lm. J Nanosci Nanotechnol. 2007 Apr-May;7(4-5):1568-72. doi: 10.1166/jnn.2007.340. J Nanosci Nanotechnol. 2007. PMID: 17450927

6

Quantitative fitting of nonlinear current-voltage curves and parameter retrieval of semiconducting nanowire, nanotube and nanoribbon devices.

Liu Y, Zhang ZY, Hu YF, Jin CH, Peng LM. Liu Y, et al. Among authors: peng lm. J Nanosci Nanotechnol. 2008 Jan;8(1):252-8. J Nanosci Nanotechnol. 2008. PMID: 18468068

7

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Zhang Z, Wang S, Ding L, Liang X, Pei T, Shen J, Xu H, Chen Q, Cui R, Li Y, Peng LM. Zhang Z, et al. Among authors: peng lm. Nano Lett. 2008 Nov;8(11):3696-701. doi: 10.1021/nl8018802. Epub 2008 Oct 24. Nano Lett. 2008. PMID: 18947214

8

Almost perfectly symmetric SWCNT-based CMOS devices and scaling.

Zhang Z, Wang S, Wang Z, Ding L, Pei T, Hu Z, Liang X, Chen Q, Li Y, Peng LM. Zhang Z, et al. Among authors: peng lm. ACS Nano. 2009 Nov 24;3(11):3781-7. doi: 10.1021/nn901079p. ACS Nano. 2009. PMID: 19845337

9

In situ measurements on individual thin carbon nanotubes using nanomanipulators inside a scanning electron microscope.

Wei X, Chen Q, Peng L, Cui R, Li Y. Wei X, et al. Ultramicroscopy. 2010 Feb;110(3):182-9. doi: 10.1016/j.ultramic.2009.11.007. Epub 2009 Nov 18. Ultramicroscopy. 2010. PMID: 19962243

10

Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices.

Ding L, Wang S, Zhang Z, Zeng Q, Wang Z, Pei T, Yang L, Liang X, Shen J, Chen Q, Cui R, Li Y, Peng LM. Ding L, et al. Among authors: peng lm. Nano Lett. 2009 Dec;9(12):4209-14. doi: 10.1021/nl9024243. Nano Lett. 2009. PMID: 19995085

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My Custom Filters

Publication date

Text availability

Article attribute

Article type

Article Language

Species

Sex

Age

Other

217 results

Search Page

Filters