Raman spectroscopy, a versatile and nondestructive technique, was employed to develop a methodology for gallium oxide (Ga2O3) phase detection and identification. This methodology combines experimental results with a comprehensive literature survey. The established Raman approach offers a powerful tool for nondestructively assessing phase purity and detecting secondary phases in Ga2O3 thin films. X-ray diffraction was used for comparison, highlighting the complementary information that these techniques may provide for Ga2O3 characterization. Few case studies are included to demonstrate the usefulness of the proposed spectroscopic approach, namely the impact of deposition conditions such as metal-organic vapor-phase epitaxy and pulsed electron deposition (PED), and extrinsic elements provided during growth (Sn in the case of PED) on Ga2O3 polymorphism. In conclusion, it is shown that Raman spectroscopy offers a quick, reliable, and nondestructive high-resolution approach for Ga2O3 thin film characterization, especially concerning phase detection and crystalline quality.
Keywords: Ga2O3; Raman spectroscopy; gallium oxide; polymorphs; thin films.