Low-temperature grapho-epitaxial La-substituted BiFeO3 on metallic perovskite

Sajid Husain; Isaac Harris; Guanhui Gao; Xinyan Li; Peter Meisenheimer; Chuqiao Shi; Pravin Kavle; Chi Hun Choi; Tae Yeon Kim; Deokyoung Kang; Piush Behera; Didier Perrodin; Hua Guo; James M Tour; Yimo Han; Lane W Martin; Zhi Yao; Ramamoorthy Ramesh

doi:10.1038/s41467-024-44728-y

Low-temperature grapho-epitaxial La-substituted BiFeO₃ on metallic perovskite

Nat Commun. 2024 Jan 11;15(1):479. doi: 10.1038/s41467-024-44728-y.

Authors

Sajid Husain^#¹, Isaac Harris^#², Guanhui Gao³, Xinyan Li³, Peter Meisenheimer⁴, Chuqiao Shi³, Pravin Kavle^{5

4}, Chi Hun Choi³, Tae Yeon Kim⁴, Deokyoung Kang⁴, Piush Behera^{5

4}, Didier Perrodin⁵, Hua Guo³, James M Tour^{3

6}, Yimo Han³, Lane W Martin^{5

4

7}, Zhi Yao⁸, Ramamoorthy Ramesh^{9

10

11

12}

Affiliations

¹ Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. shusain@lbl.gov.
² Department of Physics, University of California, Berkeley, CA, 94720, USA.
³ Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
⁴ Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
⁵ Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
⁶ Department of Chemistry, Rice University, Houston, TX, 77005, USA.
⁷ Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA.
⁸ Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. jackie_zhiyao@lbl.gov.
⁹ Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. rr73@rice.edu.
¹⁰ Department of Physics, University of California, Berkeley, CA, 94720, USA. rr73@rice.edu.
¹¹ Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. rr73@rice.edu.
¹² Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA. rr73@rice.edu.

^# Contributed equally.

Abstract

Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO₃ thin films have typically been deposited at relatively high temperatures (650-800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO₃ at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb_0.75Bi_0.25O₃ electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO₃, BaPb_0.75Bi_0.25O₃, and SrTiO₃ (001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO₃. Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO₃, where SrRuO₃ typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.

Abstract

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