Integration Technology of Micro-LED for Next-Generation Display

Dingbo Chen; Yu-Chang Chen; Guang Zeng; David Wei Zhang; Hong-Liang Lu

doi:10.34133/research.0047

Integration Technology of Micro-LED for Next-Generation Display

Research (Wash D C). 2023 Apr 12:6:0047. doi: 10.34133/research.0047. eCollection 2023.

Authors

Dingbo Chen¹, Yu-Chang Chen¹, Guang Zeng¹, David Wei Zhang^{1

2}, Hong-Liang Lu^{1

2

3}

Affiliations

¹ State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
² Jia Shan Fudan Institute, Jiaxing, Zhejiang Province 314100, China.
³ Key Laboratory of Specialty Fiber Optics and Optical Access Networks, Shanghai Institute Communication and Data Science, Shanghai University, Shanghai 200444, China.

Abstract

Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors have been widely studied for self-emissive displays. From chips to applications, integration technology plays an indispensable role in micro-LED displays. For example, large-scale display relies on the integration of discrete device dies to achieve extended micro-LED array, and full color display requires integration of red, green, and blue micro-LED units on the same substrate. Moreover, the integration with transistors or complementary metal-oxide-semiconductor circuits are necessary to control and drive the micro-LED display system. In this review article, we summarized the 3 main integration technologies for micro-LED displays, which are called transfer integration, bonding integration, and growth integration. An overview of the characteristics of these 3 integration technologies is presented, while various strategies and challenges of integrated micro-LED display system are discussed.

Publication types

Review