Memory devices have been advanced so much, but still it is highly required to find stable and reliable materials with low-power consumption. Halide perovskites (HPs) have been recently adopted for memory application since they have advantages of fast switching based on ionic motion in crystal structure. However, HPs also suffer from poor stability, so it is necessary to improve the stability of HPs. In this regard, combined first-principles screening and experimental verification are performed to design HPs that have high environmental stability and low-operating voltage for memory devices. First-principles screening identifies 2D layered AB2X5 structure as the best candidate switching layer for memory devices, because it has lower formation energy and defect formation energy than 3D ABX3 or other layered structures (A3B2X7, A2BX4). To verify results, all-inorganic 2D layered CsPb2Br5 is synthesized and used in memory devices. The memory devices that use CsPb2Br5 show much better stability and lower operating voltages than devices that use CsPbBr3. These findings are expected to provide new opportunity to design materials for reliable device applications based on calculation, screening, and experimental verification.
Keywords: CsPb2Br5; defect formation energy; first‐principle screening; formation energy; resistive switching memory.
© 2020 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim.