Heterojunction based on two-dimensional (2D) layered materials is an emerging topic in the field of nanoelectronics and optoelectronics. Here, molybdenum sulfide (MoS2)-based Schottky diodes were fabricated using the field-effect transistor configuration with asymmetric metal contact structure. Gold and chromium electrodes were employed as drain and source electrodes to form Ohmic and Schottky contact with MoS2, respectively. The devices exhibited electrical rectifying characteristic with the current rectifying ratio exceeding 103 and an ideal factor of 1.5. A physics model of the band diagram was proposed to analyze the gate-tunable rectifying behavior of the device. The dynamic rectification based on the diode circuit was further realized with the operating frequency up to 100 Hz. The devices were also demonstrated to show different sensitivities to the light under external biases in the opposite directions, with the highest photoresponsivity reaching 1.1 × 104 A/W and specific detectivity up to 8.3 × 1012 Jones at a forward drain bias of 10 V. This kind of 2D material-based Schottky diodes have the advantage of simplicity in design and fabrication, as well as superior electrical rectifying and photosensing characteristics, which have great potential for future integrated electronic and optoelectronic applications.
Keywords: Schottky diodes; asymmetric electrodes; dynamic electrical rectification; molybdenum sulfide; photosensing property.