High-Mobility Multilayered MoS2 Flakes with Low Contact Resistance Grown by Chemical Vapor Deposition

Jingying Zheng; Xingxu Yan; Zhixing Lu; Hailong Qiu; Guanchen Xu; Xu Zhou; Peng Wang; Xiaoqing Pan; Kaihui Liu; Liying Jiao

doi:10.1002/adma.201604540

High-Mobility Multilayered MoS₂ Flakes with Low Contact Resistance Grown by Chemical Vapor Deposition

Adv Mater. 2017 Apr;29(13). doi: 10.1002/adma.201604540. Epub 2017 Feb 2.

Authors

Jingying Zheng¹, Xingxu Yan², Zhixing Lu¹, Hailong Qiu¹, Guanchen Xu¹, Xu Zhou³, Peng Wang², Xiaoqing Pan^{2

4

5}, Kaihui Liu³, Liying Jiao¹

Affiliations

¹ Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China.
² National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
³ State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Center for Nanochemisty, Peking University, Beijing, 100871, China.
⁴ Department of Chemical Engineering and Materials Science, University of California-Irvine, Irvine, CA, 92697, USA.
⁵ Department of Physics and Astronomy, University of California-Irvine, Irvine, CA, 92697, USA.

PMID: 28151565
DOI: 10.1002/adma.201604540

Abstract

The controlled synthesis of high-quality multilayer (ML) MoS₂ flakes with gradually shrinking basal planes by chemical vapor deposition (CVD) is demonstrated. These CVD-grown ML MoS₂ flakes exhibit much higher mobility and current density than mechanically exfoliated ML flakes due to the reduced contact resistance which mainly resulted from direct contact between the lower MoS₂ layers and electrodes.

Keywords: MoS2; chemical vapor deposition; field-effect transistors; mobility; multilayer.