Metal-Semiconductor Phase-Transition in WSe2(1-x) Te2x Monolayer

Peng Yu; Junhao Lin; Linfeng Sun; Quang Luan Le; Xuechao Yu; Guanhui Gao; Chuang-Han Hsu; Di Wu; Tay-Rong Chang; Qingsheng Zeng; Fucai Liu; Qi Jie Wang; Horng-Tay Jeng; Hsin Lin; Achim Trampert; Zexiang Shen; Kazu Suenaga; Zheng Liu

doi:10.1002/adma.201603991

Metal-Semiconductor Phase-Transition in WSe_2(1-_x₎ Te₂_x Monolayer

Adv Mater. 2017 Jan;29(4). doi: 10.1002/adma.201603991. Epub 2016 Nov 22.

Authors

Peng Yu¹, Junhao Lin², Linfeng Sun³, Quang Luan Le¹, Xuechao Yu⁴, Guanhui Gao⁵, Chuang-Han Hsu⁶, Di Wu⁶, Tay-Rong Chang⁷, Qingsheng Zeng¹, Fucai Liu¹, Qi Jie Wang⁴, Horng-Tay Jeng^{7

8}, Hsin Lin⁶, Achim Trampert⁵, Zexiang Shen³, Kazu Suenaga², Zheng Liu¹

Affiliations

¹ School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
² National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan.
³ School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
⁴ School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
⁵ Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin Hausvogteiplatz 5-7, 10117, Berlin, Germany.
⁶ Department of Physics, National University of Singapore, 117542, Singapore.
⁷ Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan.
⁸ Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan.

PMID: 27874223
DOI: 10.1002/adma.201603991

Abstract

A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe₂ (WSe_2(1-x) Te_2x , where x = 0%-100%). The optical bandgaps of the WSe_2(1-x) Te_2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.

Keywords: 2D materials; band gap; field-effect transistor; metal; semiconductors.