Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

Cheng-Yin Wang; Canek Fuentes-Hernandez; Minseong Yun; Ankit Singh; Amir Dindar; Sangmoo Choi; Samuel Graham; Bernard Kippelen

doi:10.1021/acsami.6b10603

Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

ACS Appl Mater Interfaces. 2016 Nov 9;8(44):29872-29876. doi: 10.1021/acsami.6b10603. Epub 2016 Oct 25.

Authors

Cheng-Yin Wang¹, Canek Fuentes-Hernandez¹, Minseong Yun¹, Ankit Singh¹, Amir Dindar¹, Sangmoo Choi¹, Samuel Graham¹, Bernard Kippelen¹

Affiliation

¹ Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, and ‡Center for Organic Photonics and Electronics (COPE), Woodruff School of Mechanical Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.

PMID: 27760296
DOI: 10.1021/acsami.6b10603

Abstract

We report on top-gate OFETs with a bilayer gate dielectric comprising an Al₂O₃ /HfO₂ nanolaminate layer grown by atomic layer deposition and an amorphous fluoro-polymer layer (CYTOP). Top-gate OFETs display average carrier mobility values of 0.9 ± 0.2 cm²/(V s) and threshold voltage values of -1.9 ± 0.5 V and high operational and environmental stability under different environmental conditions such as damp air at 50 °C (80% relative humidity) and prolonged immersion in water at a temperature up to 95 °C.

Keywords: CYTOP; environmental stability; nanolaminate; operational stability; organic field-effect transistors; top-gate geometry.