Te-Doped Black Phosphorus Field-Effect Transistors

Bingchao Yang; Bensong Wan; Qionghua Zhou; Yue Wang; Wentao Hu; Weiming Lv; Qian Chen; Zhongming Zeng; Fusheng Wen; Jianyong Xiang; Shijun Yuan; Jinlan Wang; Baoshun Zhang; Wenhong Wang; Junying Zhang; Bo Xu; Zhisheng Zhao; Yongjun Tian; Zhongyuan Liu

doi:10.1002/adma.201603723

Te-Doped Black Phosphorus Field-Effect Transistors

Adv Mater. 2016 Nov;28(42):9408-9415. doi: 10.1002/adma.201603723. Epub 2016 Sep 4.

Authors

Bingchao Yang¹, Bensong Wan^{2

3}, Qionghua Zhou⁴, Yue Wang⁵, Wentao Hu¹, Weiming Lv^{1

2}, Qian Chen⁴, Zhongming Zeng², Fusheng Wen¹, Jianyong Xiang¹, Shijun Yuan⁴, Jinlan Wang⁴, Baoshun Zhang², Wenhong Wang⁵, Junying Zhang³, Bo Xu¹, Zhisheng Zhao¹, Yongjun Tian¹, Zhongyuan Liu¹

Affiliations

¹ State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004, P. R. China.
² Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou, 215123, China.
³ Department of Physics, Beihang University, Beijing, 100191, China.
⁴ Department of Physics, Southeast University, Nanjing, 211189, China.
⁵ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

PMID: 27594417
DOI: 10.1002/adma.201603723

Abstract

Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving airstable black-phosphorus devices.

Keywords: 2D layered materials; Te-doping; black phosphorus; field-effect transistors.