p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

Fei Xue; Libo Chen; Jian Chen; Jingbin Liu; Longfei Wang; Mengxiao Chen; Yaokun Pang; Xiaonian Yang; Guoyun Gao; Junyi Zhai; Zhong Lin Wang

doi:10.1002/adma.201506472

p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

Adv Mater. 2016 May;28(17):3391-8. doi: 10.1002/adma.201506472. Epub 2016 Mar 3.

Authors

Fei Xue¹, Libo Chen¹, Jian Chen¹, Jingbin Liu¹, Longfei Wang¹, Mengxiao Chen¹, Yaokun Pang¹, Xiaonian Yang¹, Guoyun Gao¹, Junyi Zhai¹, Zhong Lin Wang^{1

2}

Affiliations

¹ Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
² School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.

PMID: 26936489
DOI: 10.1002/adma.201506472

Abstract

A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.

Keywords: diodes; n-type ZnO; p-type MoS2; photoresponse; piezophototronic effect.

Publication types

Research Support, Non-U.S. Gov't