Top-down fabrication of semiconductor nanowires with alternating structures along their longitudinal and transverse axes

Small. 2005 Nov;1(11):1052-7. doi: 10.1002/smll.200500094.

Authors

Yugang Sun¹, Rachel A Graff, Michael S Strano, John A Rogers

Affiliation

¹ Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory and Beckman, Institute, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.

PMID: 17193393
DOI: 10.1002/smll.200500094

No abstract available

Publication types

Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Arsenicals / chemistry
Gallium / chemistry
Gold / chemistry
Light
Luminescence
Microscopy, Atomic Force
Microscopy, Electron, Scanning
Nanotechnology / instrumentation*
Nanotechnology / methods*
Nanowires / chemistry*
Semiconductors*
Silicon Dioxide / chemistry
Surface Plasmon Resonance

Substances

Arsenicals
gallium arsenide
Gold
Silicon Dioxide
Gallium