We have realized a scanning near-field infrared microscope in the 3-4 microm wavelength range. As a light source, a tunable high power continuous wave infrared optical parametric oscillator with an output power of up to 2.9 W in the 3-4 microm range has been set up. Using scanning near field infrared microscopy (SNIM) imaging we have been able to obtain a lateral resolution of < or =30 nm at a wavelength of 3.2 microm, which is far below the far-field resolution limit of lambda/2. Using this "chemical nanoscope" we could image a sub-surface structure of implanted gallium ions in a topographically flat silicon wafer giving evidence for a near-field contrast. The observed contrast is explained in terms of the effective infrared reflection as a function of the sub-surface gallium doping concentration. The future use of the setup for nm imaging in the chemically important OH, N-H and C-H stretching vibration is discussed.